IRF3205

IRF3205,VDSS = 55V R DS(on) = 8.0mΩ ID = 110A , HEXFET® Power MOSFET

IOR_Infineon
Shipping Starts from ₹59
SKU: SEMI-MFET-NCH-IRF3205
MPN: IRF3205
Stock Status: 42 pcs
Delivery Status: 3-7 days
₹42.64
Including Tax: ₹6.50
pcs

Description

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
Description
            Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
          The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Datasheet: Download

Technical Data

Absolute Maximum Ratings
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 110 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 80 A
IDM Pulsed Drain Current 390A
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current 62 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ Operating Junction -55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case )°C
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Thermal Resistance
RθJC Junction-to-Case 0.75(max) °C/W
RθCS Case-to-Sink, Flat, Greased Surface 0.50 (Typ) °C/W
RθJA Junction-to-Ambient 62 (Max) °C/W

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