IRF540

Name: IRF540
Brand: IOR_Infineon
SKU: SEMI-MFET-NCH-IRF540
Price: 0.4 USD
Availability: InStock

IRF540,VDSS = 100V R DS(on) = 44mΩ ID = 33A, HEXFET® Power MOSFET

Shipping Starts from $29.23

SKU: SEMI-MFET-NCH-IRF540

MPN: IRF540N

Stock Status: 10 pcs

Delivery Status: 3-7 days

Description

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

Description

Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry

Datasheet: Download

Technical Data

Absolute Maximum Ratings
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V	33
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V	23 A
IDM Pulsed Drain Current	110A
PD @TC = 25°C Power Dissipation	130 W
Linear Derating Factor	0.87 W/°C
VGS Gate-to-Source Voltage	± 20 V
IAR Avalanche Current	16 A
EAR Repetitive Avalanche Energy	13 mJ
dv/dt Peak Diode Recovery dv/dt	7.0 V/ns
TJ Operating Junction and	-55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds	300 (1.6mm from case ) °C
Mounting torque, 6-32 or M3 screw	10 lbf•in (1.1N•m)
Thermal Resistance
RθJC Junction-to-Case	1.15 °C/W
RθCS Case-to-Sink, Flat, Greased Surface	0.50 °C/W
RθJA Junction-to-Ambient	62 °C/W

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