IRF840

IRF840,ID 8A, VDS 500V, RDSon 0.85 Ohm, N-Channel Power MOSFETs

Shipping Starts from ₹59
SKU: SEMI--MFET-NCH-IRF840
MPN: IRF840
Stock Status: 39 pcs
Delivery Status: 3-7 days
₹35.70
Including Tax: ₹5.45
pcs

Description

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION
        Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Datasheet: Download

Technical Data

ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ± 20 V
Continuous Drain Current VGS at 10 V TC = 25 °C ID 8.0
ID TC = 100 °C 5.1 A
Pulsed Drain Currenta IDM 32A
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energyb EAS 510 mJ
Repetitive Avalanche Currenta IAR 8.0 A
Repetitive Avalanche Energya EAR 13 mJ
Maximum Power Dissipation TC = 25 °C PD 125 W
Peak Diode Recovery dV/dtc dV/dt 3.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m

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