IRFP150N

IRFP150N HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A

Shipping Starts from ₹59
SKU: SEMI-MFET-NCHS-IRFP150N
MPN: IRFP150N
Stock Status: 178 pcs
Delivery Status: 3-7 days
Qty Unit Price
1+ ₹74
10+ ₹73.16
25+ ₹71.98
50+ ₹69.62
100+ ₹64.90
₹74
Including Tax: ₹11.29
pcs

Description

-Advanced Process Technology
- Dynamic dv/dt Rating
-Fast Switching


Technical Data

Manufacturer Onsemi
Product Category MOSFET
Technology Si
Mounting Style Through Hole
Package/Case TO-247-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 42 A
Rds On - Drain-Source Resistance 36 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 150 W
Channel Mode Enhancement
Brand Infineon / IR
Configuration Single
Fall Time 40 ns
Height 20.7 mm
Length 15.87 mm
Product Type MOSFET
Rise Time 56 ns
Subcategory MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 45 ns
Typical Turn-On Delay Time 11 ns
Width 5.31 mm
Unit Weight 6 g

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