IRFP250

IRFP250N HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.075 Ohm, ID = 30A

Shipping Starts from $23.99
SKU: SEMI-MFET-NCH-IRFP250
MPN: IRFP250
Stock Status: 300 pcs
Delivery Status: 3-7 days
$0.73
pcs

Description

-Advanced Process Technology
-Dynamic dv/dt Rating
-175°C Operating Temperature
-Fast Switching
-Fully Avalanche Rated
-Ease of Paralleling
-Simple Drive Requirements
TO-247AC
-Lead-Free

Ordering Code:
IRFP250NLD,  Internal Drain Inductance4.5nHBetween lead,
6mm (0.25in.)
LS, Internal Source Inductance7.5nHfrom package
and center of die contact
IRFP250MLD, Internal Drain Inductance5nH
LS, Internal Source Inductance13nH


Technical Data

Manufacturer Infineon
Product Category MOSFET
Technology Si
Mounting Style Through Hole
Package/Case TO-247-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 30 A
Rds On - Drain-Source Resistance 75 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 214 W
Channel Mode Enhancement
Brand Infineon / IR
Configuration Single
Fall Time 33 ns
Height 20.7 mm
Length 15.87 mm
Product Type MOSFET
Rise Time 43 ns
Subcategory MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 41 ns
Typical Turn-On Delay Time 14 ns
Width 5.31 mm
Unit Weight 6 g