STP100N6F7 P100N6F7

MOSFET N-channel 60 V, 4.7 mOhm typ 100 A STripFET F7 Power MOSFET

Shipping Starts from ₹59
SKU: SEMI-MFET-NCH-STP100N6F7
MPN: STP100N6F7
Stock Status: 86 pcs
Delivery Status: 3-7 days
Qty Unit Price
1+ ₹72
10+ ₹70.80
25+ ₹69.03
50+ ₹67.26
₹72
Including Tax: ₹10.98
pcs

Description

• Among the lowest R DS(on) on the market
• Excellent figure of merit (FoM)
• Low C rss /C iss ratio for EMI immunity
• High avalanche ruggedness

This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.

Technical Data

Manufacturer STMicroelectronics
Product Category MOSFET
Technology Si
Mounting Style Through Hole
Package/Case TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 5.6 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 30 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 125 W
Channel Mode Enhancement
Tradename STripFET
Packaging Tube
Brand STMicroelectronics
Configuration Single
Fall Time 15 ns
Product Type MOSFET
Rise Time 55.5 ns
Series STP100N6F7
Subcategory MOSFETs
Transistor Type 1 N-Channel Power MOSFET
Typical Turn-Off Delay Time 28.6 ns
Typical Turn-On Delay Time 21.6 ns
Unit Weight 2 g

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