STP105N3LL P105N3LL N-Channel mosfet

P105N3LL N-channel Mosfet 30 V, 150 A, 2.7 mΩ typ.,STripFET™ H6 Power MOSFET in a TO-220 package

STMicroelectronics
Shipping Starts from $23.99
SKU: SEMI-MFET-NCH-P105N3LL
MPN: STP105N3LL
Stock Status: 193 pcs
Delivery Status: 3-7 days
$0.37
pcs

Description

Features

  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
Description
      This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Order code        Marking     VDS   RDS(on) max.       ID          Packages
STP105N3LL      P105N3LL    30 V     3.5 mΩ              150 A       TO-220
                            / 105N3LL

Datasheet: Download

Technical Data

Absolute maximum ratings
VDS Drain-source voltage 30 V
VGS Gate-source voltage ± 20 V
ID Continuous drain current at TC = 25 °C (silicon limited) 150 A
ID Continuous drain current at TC = 100 °C (silicon limited) 105 A
ID Continuous drain current at TC = 25 °C (package limited) 80 A
IDM Pulsed drain current 320 A
PTOT Total dissipation at TC = 25 °C 140 W
Derating factor 0.9 W/°C
EAS (Starting Tj = 25°C, IAV = 40 A)
Single pulse avalanche energy 150 mJ
Tstg Storage temperature -55 to 175 °C
Tj Max. operating junction temperature 175 °C
Thermal data
Rthj-case Thermal resistance junction-case max 1.1 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W

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