KSC3503 NPN Epitaxial Silicon Transistor

Elevate your audio and high-voltage applications with the KSC3503 NPN Epitaxial Silicon Transistor, now available at GEOES eStore. This high-performance transistor is designed to offer superior linear gain characteristics and low harmonic distortion across a wide range of operating conditions, making it ideal for high-fidelity audio amplifiers, voltage amplifiers, and general-purpose amplifiers. With a maximum collector-emitter voltage of 300V and a high frequency response up to 150 MHz, the KSC3503 ensures exceptional performance for professional audio equipment and other demanding electronic applications.

Key Features:

    High Voltage Operation: Rated for collector-emitter voltages up to 300V, enabling use in high-voltage applications.
    Low Reverse Transfer Capacitance: Features a low reverse transfer capacitance of 1.8 pF at VCB = 30 V, enhancing signal integrity and response.
    High Frequency Response: Offers a current gain bandwidth product of 150 MHz, suitable for high-speed switching and audio frequency applications.
    Excellent Gain Linearity: Ensures low total harmonic distortion, making it ideal for audio amplification.
    RoHS Compliant: Meets modern environmental standards, being lead-free and RoHS compliant.
    Complementary Pair: The KSC3503 pairs perfectly with the KSA1381 PNP transistor for push-pull configurations.

Applications:

    Audio Amplifiers: Optimizes performance in professional audio systems, where clarity and power handling are critical.
    Voltage Amplifiers and Current Sources: Ideal for use in circuits requiring stable and precise voltage amplification.
    Video Output Stages: Suitable for CRT displays and video output applications requiring high voltage and bandwidth.
    General Purpose Amplification: Versatile enough for a range of electronics projects and industrial applications.

Technical Specifications:

    Collector-Emitter Voltage (VCEO): 300V
    Collector-Base Voltage (VCBO): 300V
    Emitter-Base Voltage (VEBO): 5V
    Collector Current (DC): 100 mA
    Collector Current (Pulse): 200 mA
    Total Device Dissipation: 7 W at 25°C
    Junction and Storage Temperature: -50 to +150 °C
    Thermal Resistance, Junction to Case: 17.8 °C/W

Getting Started:
Incorporating the KSC3503 into your design is straightforward. Visit GEOES eStore to access full thermal and electrical SPICE models, helping you simulate and validate designs before physical prototyping.

Leverage the power and precision of the KSC3503 NPN Epitaxial Silicon Transistor for your high-performance applications. Available now at GEOES eStore, where you can rely on our expert support and fast shipping.