MJE340 NPN Transistor

Elevate your high-voltage applications with the MJE340 NPN Silicon Transistor, now available at GEOES eStore. This medium-power transistor is designed for linear and switching applications, making it incredibly versatile for use in transformerless, line-operated equipment and other high-voltage systems. With a robust construction that includes a high power dissipation rating for enhanced reliability, the MJE340 is perfect for designs that require dependable performance in demanding conditions.

Key Features:

    High Collector-Emitter Voltage: With a VCEO of 300V, the MJE340 is suitable for high-voltage applications, ensuring reliable operation under strenuous conditions.
    High Power Dissipation: Can handle up to 20 watts of power dissipation, making it ideal for robust applications requiring extended operation.
    Low Emitter-Base Voltage: Features an emitter-base voltage of 3V, facilitating efficient and safe operation within a wide range of circuit designs.
    High Current Capability: Supports a continuous collector current of up to 500 mA, allowing for flexible usage in a variety of electronic assemblies.
    Thermal Efficiency: With a thermal resistance from junction-to-case of 6.25 °C/W, it maintains stability and performance under thermal stress.
    RoHS Compliant: Lead-free and compliant with RoHS standards, ensuring environmental safety and allowing usage in a wide range of markets.

Applications:

    Power Supplies: Ideal for use in transformerless, line-operated power supplies where high voltage capability is crucial.
    Audio Amplifiers: Suitable for driver stages in high-fidelity audio amplifiers due to its high power handling and linearity.
    Switching Regulators: Provides reliable switching performance for enhanced power management and efficiency.
    Motor Control: Can be used in motor drive applications requiring high breakdown voltage and fast switching.

Technical Specifications:

    Collector-Emitter Voltage (VCEO): 300V
    Emitter-Base Voltage (VEBO): 3V
    Collector Current - Continuous (IC): 500 mA
    Power Disspiration (PD): 20W at 25°C
    Operating and Storage Junction Temperature Range: -65 to +150°C

Getting Started:
Incorporating the MJE340 into your designs is straightforward. For additional resources, including detailed datasheets, application notes, and thermal management guidelines, visit GEOES eStore.

Empower your electronic designs with the MJE340 NPN Silicon Transistor for exceptional performance and reliability. Available now at GEOES eStore, where we provide expert support and fast delivery to help you succeed in your projects.