IRF540,VDSS = 100V R DS(on) = 44mΩ ID = 33A, HEXFET® Power MOSFET

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Stock Status: 10 pcs
Delivery Status: 3-7 days
Including Tax: ₹4.46


  •  Advanced Process Technology
  •  Ultra Low On-Resistance
  •  Dynamic dv/dt Rating
  •  175°C Operating Temperature
  •  Fast Switching
  •  Fully Avalanche Rated


           Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
           The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry

Datasheet: Download

Technical Data

Absolute Maximum Ratings
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 33
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 23 A
IDM Pulsed Drain Current 110A
PD @TC = 25°C Power Dissipation 130 W
Linear Derating Factor 0.87 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current 16 A
EAR Repetitive Avalanche Energy 13 mJ
dv/dt Peak Diode Recovery dv/dt  7.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Thermal Resistance
RθJC Junction-to-Case 1.15 °C/W
RθCS Case-to-Sink, Flat, Greased Surface 0.50 °C/W
RθJA Junction-to-Ambient 62 °C/W

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