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MJE350

MJE350 High-Voltage General-Purpose PNP Silicon Transistor

Shipping Starts from ₹59
SKU: TRANS-PNP-MJE350
MPN: MJE350
Stock Status: 43 pcs
Delivery Status: 3-7 days
Qty Unit Price
1+ ₹13
10+ ₹12.74
25+ ₹12.39
50+ ₹11.80
100+ ₹11.21
₹13
Including Tax: ₹1.98
pcs

Description

Enhance your high-voltage applications with the MJE350 PNP Silicon Transistor, now available at GEOES eStore. This transistor is ideal for linear and switching applications requiring a PNP complement, especially in high-fidelity audio output stages and power regulation systems. With its high collector-emitter voltage of -300V and a power dissipation capacity of 20 watts, the MJE350 is designed for robust performance in demanding environments.

Key Features:

    High Collector-Emitter Voltage: Offers a maximum collector-emitter voltage of -300V, providing the capability for high-voltage applications.
    High Power Dissipation: Rated for 20W at 25°C, ensuring reliable performance under high power conditions.
    Low Saturation Voltage: Minimizes on-state power loss, making it efficient for power amplification.
    High Current Gain Bandwidth: Provides excellent frequency response for audio and other high-speed switching applications.
    Complementary Pair: Perfectly complements the MJE340 NPN transistor, allowing for versatile use in push-pull and other complementary configurations.

Applications:

    Audio Amplifiers: Ideal for use in high-fidelity audio amplifiers where high voltage and power are needed.
    Power Regulators: Suitable for voltage and current regulation in high-power supply systems.
    Switching Applications: Provides reliable switching for full-bridge and half-bridge circuits.
    Driver Stages: Acts as a robust driver in high-voltage and high-current applications.

Technical Specifications:

    Collector-Emitter Voltage (VCEO): -300V
    Emitter-Base Voltage (VEBO): -5V
    Collector Current (IC): -500 mA
    Power Dissipation (PC): 20 W at 25°C
    DC Current Gain (hFE): 30 to 240 at -50 mA

Getting Started:
Integrating the MJE350 into your circuit is straightforward, with comprehensive documentation and support available from GEOES eStore. Visit our website to access datasheets, application notes, and design resources to maximize the transistor's capabilities.

Experience superior performance with the MJE350 PNP Silicon Transistor, exclusively available at GEOES eStore. Shop now for expert support and rapid delivery!

Technical Data

Collector-Emitter Voltage (VCEO) -300V
Emitter-Base Voltage (VEBO) -5V
Collector Current (IC) -500 mA
Power Dissipation (PC) 20 W at 25°C
DC Current Gain (hFE) 30 to 240 at -50 mA

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