IRFP260N
IRFP260N HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040Ohm, ID = 30A
Shipping Starts from ₹59
SKU: SEMI-MFET-NCH-IRFP260N
MPN: IRFP260N
This item is currently out of stock and can not be purchased.
Description
-Dynamic dV/dt rating
-Repetitive avalanche rated
-Fast switching
-Ease of paralleling
-Simple drive requirements
Technical Data
| Manufacturer |
Infineon |
| Product Category |
MOSFET |
| Technology |
Si |
| Mounting Style |
Through Hole |
| Package/Case |
TO-247-3 |
| Transistor Polarity |
N-Channel |
| Number of Channels |
1 Channel |
| Vds - Drain-Source Breakdown Voltage |
200 V |
| Id - Continuous Drain Current |
50 A |
| Rds On - Drain-Source Resistance |
40 mOhms |
| Vgs - Gate-Source Voltage |
- 20 V, + 20 V |
| Minimum Operating Temperature |
- 55 C |
| Maximum Operating Temperature |
+ 175 C |
| Pd - Power Dissipation |
300 W |
| Channel Mode |
Enhancement |
| Brand |
Infineon / IR |
| Configuration |
Single |
| Fall Time |
48 ns |
| Height |
20.7 mm |
| Length |
15.87 mm |
| Product Type |
MOSFET |
| Rise Time |
60 ns |
| Subcategory |
MOSFETs |
| Transistor Type |
1 N-Channel |
| Typical Turn-Off Delay Time |
55 ns |
| Typical Turn-On Delay Time |
17 ns |
| Width |
5.31 mm |
| Unit Weight |
6 g |
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