MJL4281A - MJL4302A Complementary Pair Amplifier Transistor

Product Description:

Explore the superior performance and reliability of the MJL4281A (NPN) and MJL4302A (PNP) complementary silicon power bipolar transistors, now available at GEOES eStore. Designed for high power audio applications, these transistors are perfect for delivering high-quality sound with low harmonic distortion. With a high collector-emitter sustaining voltage of 350V and robust safe operation areas, they ensure reliable and continuous performance under a range of conditions, making them ideal for professional audio amplifiers and high fidelity systems.

Key Features:

    High Sustaining Voltage: Both transistors can handle a collector-emitter sustaining voltage of up to 350V, making them suitable for high-voltage applications.
    High Current Gain: Offers a wide range of DC current gains from 80 to 240 at collector currents from 100 mA to 5A, ensuring efficient operation across various loads.
    Low Harmonic Distortion: Engineered to minimize harmonic distortion, enhancing audio clarity and fidelity.
    Robust Safe Operation Area: Rated for 1.0 A/100 V operation for 1 second, providing reliable performance under stressful conditions.
    High Transition Frequency (fT): High frequency response up to 30 MHz, suitable for high-speed switching applications.
    Thermal Efficiency: Excellent thermal resistance with a junction-to-case value of 0.54 °C/W, promoting better heat dissipation and longevity.

Applications:

    Professional Audio Amplifiers: Ideal for powering stage and studio equipment where clarity and power are paramount.
    High Fidelity Audio Systems: Enhances audio systems with reliable power handling and exceptional sound quality.
    Switching Power Supplies: Can be utilized in power supplies where high voltage and current handling is necessary.
    Industrial Applications: Suitable for robust industrial environments requiring durable and reliable transistor solutions.

Technical Specifications:

    Collector-Emitter Voltage (VCEO): 350V
    Collector-Base Voltage (VCBO): 350V
    Emitter-Base Voltage (VEBO): 5V
    Collector Current (Continuous): 15A, Peak: 30A
    Base Current (Continuous): 1.5A
    Total Power Dissipation (@TC = 25°C): 230W
    Operating and Storage Junction Temperature Range: -65 to +150°C

Getting Started:
Deploy the MJL4281A and MJL4302A in your next high-power project with confidence. Visit GEOES eStore for detailed datasheets, application notes, and design resources to maximize the capabilities of these powerful transistors.

Enhance your audio and industrial applications with the MJL4281A and MJL4302A silicon power bipolar transistors, exclusively available at GEOES eStore. Shop now to benefit from expert support and prompt delivery!