IRF9540,VDSS = -100V, RDS(on) = 0.117Ω , ID = -23A HEXFET® Power MOSFET

Shipping Starts from ₹59
MPN: IRF9540n
Stock Status: 8 pcs
Delivery Status: 3-7 days
Including Tax: ₹6.05


  • Advanced Process Technology
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • P-Channel
  • Fully Avalanche Rated
       Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the

Datasheet: Download

Technical Data

Absolute Maximum Ratings
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -23
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -16 A
IDM Pulsed Drain Current -76
PD @TC = 25°C Power Dissipation 140 W
Linear Derating Factor 0.91 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 430 mJ
IAR Avalanche Current -11 A
EAR Repetitive Avalanche Energy 14 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

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